发明名称 LIGHT-EMITTING DIODE STRUCTURE AND PREPARATION METHOD THEREFOR
摘要 A light-emitting diode structure and the preparation method therefor. Using a secondary growing manner, an aluminum nitride layer is made and inserted, stops the defects extension of a bottom layer and improves wafer warpage phenomena caused by thermal reaction; meanwhile, patterning treatment is performed on the aluminum nitride layer so as to improve the light emitting efficiency of the light-emitting diode.
申请公布号 WO2016173359(A1) 申请公布日期 2016.11.03
申请号 WO2016CN77838 申请日期 2016.03.30
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 LEE, Cheng-Hung;XU, Zhibo;LIN, Chan-Chan;CHUO, Chang-Cheng;CHANG, Chia-Hung
分类号 H01L33/12 主分类号 H01L33/12
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