SEMICONDUCTOR MEMORY DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To increase the operation speed of a semiconductor memory including an ECC circuit. Ž<P>SOLUTION: A read signal RYPA to control the operation timing of a read latch circuit 101 is input to a read latch circuit 101 and also to an ECC replica circuit 105. The signal is input to a write-buffer circuit 104 as a write signal WYPA at a timing delayed by the time corresponding to the signal propagation time through the circuit corresponding to the signal propagation path in an ECC circuit 102. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž