发明名称 Method for manufacturing organic light emitting diode display device
摘要 A method of manufacturing an OLED device is discussed. The method can include forming a gate electrode on a substrate; forming a gate insulation film on the substrate provided with the gate electrode; forming a channel layer, a source electrode and a drain electrode on the substrate provided with the gate insulation film; forming an organic light emitting diode which includes a first electrode connected to the drain electrode, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer; forming a passivation layer, which has a hydrogen content below 10%, on the substrate provided with the organic light emitting diode using an organic silicon compound; and forming a sealing layer on the substrate provided with the passivation layer.
申请公布号 US9461270(B2) 申请公布日期 2016.10.04
申请号 US201414529020 申请日期 2014.10.30
申请人 LG DISPLAY CO., LTD. 发明人 Kang Jin Goo;Shin Young Hoon
分类号 H01L51/52;H01L27/12 主分类号 H01L51/52
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method of manufacturing an organic light emitting diode display device, the method comprising: forming a gate electrode on a substrate; forming a gate insulation film on the substrate provided with the gate electrode; forming a channel layer, a source electrode and a drain electrode on the substrate provided with the gate insulation film; forming an organic light emitting diode which includes a first electrode connected to the drain electrode, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer; forming a passivation layer with a hydrogen content below 10%, on the substrate provided with the organic light emitting diode, by polymerizing an organic silicon compound with oxygen or nitrogen in a plasma state at a temperature below 100° C, wherein no silane or ammonia-based gases are used for forming the passivation layer such that the passivation layer is not exposed to hydrogen during its formation to minimize the hydrogen content of the passivation layer; and forming a sealing layer on the substrate provided with the passivation layer.
地址 Seoul KR