Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure

摘要

A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

主权项

1. A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped silicon germanium with a monocrystalline structure, wherein the at least two trenches are covered by a layer of p-doped silicon germanium with a polycrystalline structure, wherein the substrate comprises monocrystalline silicon and each trench comprises polycrystalline silicon separated from the monocrystalline silicon by a layer of silicon oxide, wherein the silicon oxide extends above upper surfaces of the monocrystalline silicon and the polycrystalline silicon, and wherein the silicon oxide has a top end with an angled top surface that extends above an upper surface of the layer of p-doped silicon germanium with the monocrystalline structure and extends below an upper surface of the layer of p-doped silicon germanium with the polycrystalline structure.