| 摘要 |
A semiconductor device and a fabricating method thereof are provided to prevent damage of an insulating layer for a gate by not exposing the insulating layer using a buffer layer during a gate etching process. An insulating layer(104) for a gate is formed on a semiconductor substrate(102), and a conductive layer pattern for the gate is formed on the insulating layer. A buffer layer(114) is formed between the conductive layer patterns, and a metal barrier layer is formed on the conductive layer pattern and the buffer layer. A metal layer(118) for the gate is formed on the metal barrier layer. The buffer layer is an oxide layer, and a conductive layer pattern is polysilicon. The metal barrier layer has a first metal barrier layer(108) comprising a Ti layer and a TiN layer and a second metal barrier layer(116) comprising a WSi layer and a WN layer.
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