发明名称 |
Integrated helical multi-layer inductor structures |
摘要 |
A chip package comprising: a chip stack comprising at least one chip; and a thermal power plane comprising at least two substantially parallel dielectric layers having conductive connectors patterned therein, the at least two dielectric layers electrically connected by vias, wherein said vias are substantially perpendicular to the at least two dielectric layers, wherein each of the vias electrically connects to a connector patterned within a dielectric layer of the at least two dielectric layers at a via connection, wherein an inductor used in supplying power to the at least one chip is formed from the vias and from connectors electrically connecting via connections on each of the at least two dielectric layers. |
申请公布号 |
US9397042(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201414160571 |
申请日期 |
2014.01.22 |
申请人 |
International Business Machines Corporation |
发明人 |
Brunschwiler Thomas J;Castriotta Michele;Gordin Rachel;Oggioni Stefano Sergio;Schlottig Gerd |
分类号 |
H01L23/522;H01L23/528 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
Glazberg, Esq. Ziv |
主权项 |
1. A chip package comprising:
a chip stack comprising at least one chip, the at least one chip comprising at least one switching component; and a thermal power plane comprising at least two substantially parallel dielectric layers patterned within substrate and having conductive connectors patterned therein, the at least two dielectric layers electrically connected by vias, wherein said vias are substantially perpendicular to the at least two dielectric layers, wherein one or more vias are stacked to reach from a top of the substrate to a bottom of the substrate and adapted for dissipating heat, wherein each of the vias electrically connects to a connector patterned within a dielectric layer of the at least two dielectric layers at a via connection, and wherein an inductor used in supplying power to the at least one chip is formed from the vias and from connectors electrically connecting via connections on each of the at least two dielectric layers. |
地址 |
Armonk NY US |