| 摘要 |
The purpose of the present invention is to provide a silicon carbide semiconductor device and a process for producing the semiconductor device, the semiconductor device having a withstand voltage heightened by improving the step coverage properties of the interlayer dielectric for covering polysilicon electrodes. The process includes a step in which a gate insulating film is formed on a silicon carbide substrate, a step in which a polysilicon film is formed on the gate insulating film, a step in which one or more dopants selected from among N, P, As, Sb, B, Al, and Ar are introduced into the polysilicon film by ion implantation, and a step in which a mask is selectively formed on the polysilicon film. The exposed portions of the polysilicon film are removed by isotropic dry etching. Thus, polysilicon electrodes can be formed so that in each polysilicon electrode, the hem part sandwiched between the bottom surface which is in contact with the gate insulating film and the lateral surface of the polysilicon electrode has an inclination angle of 60° or less. |
