| 摘要 |
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is substantially increased by a shielding electrode (144) insulated between first and second gate electrodes (204, 208) in a notch between laterally spaced source regions (112, 152) and channel regions (154, 156) joined by a common drift region (158) around the bottom of the notch. The shielding electrode prevents the electric field gradient toward the gate electrode on one side of the notch from inducing depletion in the drift region along the opposite side of the notch. This prevents unwanted inducement of conduction channels in the drift region during the OFF state of the FET. High density, high voltage, plural FET structure is disclosed. |
