发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR FLAT PANEL DISPLAY HAVING ENHANCED INSULATING PROPERTY BETWEEN GATE LINE AND DATA LINE AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention relates to a thin film transistor substrate for a flat panel display having enhanced insulating properties between a gate line and a data line. According to an embodiment of the present invention, a thin film transistor substrate for a flat panel display includes source-drain elements disposed on a substrate, an organic insulating layer, a semiconductor layer, a gate element, source-drain connecting terminals, and a pixel electrode. The organic insulating layer covers the source-drain element. The semiconductor layer is disposed between the source-drain elements on the organic insulating layer. The gate element is disposed with a gate insulating layer interposed therebetween on the semiconductor layer and the organic insulating layer. The source-drain connecting terminals connect the source-drain elements to the semiconductor layer. The pixel electrode extends from the source-drain elements.
申请公布号 KR20160057526(A) 申请公布日期 2016.05.24
申请号 KR20140157945 申请日期 2014.11.13
申请人 LG DISPLAY CO., LTD. 发明人 HONG, GI SANG;KIM, JEONG OH
分类号 H01L29/786;G02F1/136;H01L21/336;H01L27/32 主分类号 H01L29/786
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