| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma deposition apparatus and method which can reduce the adhesion amount of a film component to an introduction surface of a microwave introduction part.SOLUTION: A plasma deposition apparatus 10 comprises a chamber 1, a raw material gas supply part 15 for supplying a raw material gas into the chamber, a gas discharge part 16 for discharging gas inside the chamber, a microwave oscillator 4 for generating a microwave, a microwave introduction part 2 for introducing the microwave generated by the microwave oscillator into the chamber, and a voltage application part 5 for applying a negative bias voltage to a conductor including a workpiece 3, and forms a coating film derived from the raw material gas on a workpiece surface. In addition, an introduction surface 21 of the microwave introduction part, facing the inside of the chamber is provided with an introduction surface gas supply part 7 for supplying a non-raw material gas.SELECTED DRAWING: Figure 1 |
