| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
| 摘要 |
A semiconductor device is provided, which includes a first conductive layer disposed on a substrate, a dielectric layer with at least an opening disposed on the first conductive layer, and a plurality of plugs filling up the openings. At least a portion of the dielectric layer adjacent to the openings is Si-rich, and each of the plugs includes a second conductive layer surrounded by a barrier layer. |
| 申请公布号 |
US2016351493(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201514723076 |
申请日期 |
2015.05.27 |
| 申请人 |
MACRONIX International Co., Ltd. |
发明人 |
Chiu Chien-Lan;Hung Yung-Tai;Su Chin-Ta;Luoh Tuung |
| 分类号 |
H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first conductive layer, disposed on a substrate; a dielectric layer with at least an opening, disposed on the first conductive layer, wherein at least a portion of the dielectric layer adjacent to the openings is Si-rich; and a plurality of plugs, filling up the openings, and each of the plugs comprises a second conductive layer surrounded by a barrier layer. |
| 地址 |
Hsinchu TW |
