NITRIDE-BASED TRANSISTOR FOR IMPLEMENTING NORMALLY-OFF

摘要

A nitride-based transistor for implementing normally-off, according to an embodiment, comprises: an n-type-doped first nitride-based first semiconductor layer grown on an m-surface; an insulating second nitride-based second semiconductor layer disposed on the first semiconductor layer; and a gate electrode layer disposed on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer have different energy band gaps.