发明名称 |
Infrared detector utilizing diamond film |
摘要 |
A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.
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申请公布号 |
US5406081(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19930158214 |
申请日期 |
1993.11.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
INUSHIMA, TAKASHI |
分类号 |
G01J5/20;H01L31/028;H01L31/18;(IPC1-7):G01J5/20;H01L31/025 |
主分类号 |
G01J5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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