发明名称 Infrared detector utilizing diamond film
摘要 A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.
申请公布号 US5406081(A) 申请公布日期 1995.04.11
申请号 US19930158214 申请日期 1993.11.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 INUSHIMA, TAKASHI
分类号 G01J5/20;H01L31/028;H01L31/18;(IPC1-7):G01J5/20;H01L31/025 主分类号 G01J5/20
代理机构 代理人
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