PATTERN FORMING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method and a method for producing a semiconductor device by which variation in line width of a pattern of a layer to be etched is reduced.

SOLUTION: The pattern forming method and the method for producing a semiconductor device include: a first step of forming a resist pattern 15' containing a polymeric material having a lactone group-containing skeleton on a gate electrode film 12 disposed on a substrate 11; a second step of plasma-treating the resist pattern 15' with a hydrogen-containing gas so as to lower the glass transition temperature or softening point of the resist pattern 15'; and a third step of forming a gate electrode by transferring the plasma-treated resist pattern 15' to the gate electrode film 12 by etching.

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