| 发明名称 |
3D INTEGRATED CIRCUIT (3DIC) STRUCTURE AND METHOD OF MAKING SAME |
| 摘要 |
An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector. |
| 申请公布号 |
US2016197055(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201514591784 |
申请日期 |
2015.01.07 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Hua;Chiou Wen-Chih;Liu Chung-Shi |
| 分类号 |
H01L25/065;H01L23/00;H01L25/00 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bonded integrated circuit (IC) structure comprising:
a first IC structure comprising a first bonding layer and a connector; and a second IC structure bonded to the first IC structure, wherein the second IC structure comprises:
a second bonding layer over an interconnect layer, the second bonding layer bonded to and contacting the first bonding layer, wherein the connector extends past an interface between the first bonding layer and the second bonding layer; anda contact pad in the second bonding layer, wherein the contact pad contacts a lateral surface and a sidewall of the connector, wherein the connector is electrically connected to the interconnect layer through the contact pad. |
| 地址 |
Hsin-Chu TW |
