III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A III nitride semiconductor light emitting diode is provided to enhance the external quantum efficiency of an emitting device by forming a hybrid optical scattering layer. The III nitride semiconductor light emitting diode comprises a substrate(10), and a plurality of III nitride semiconductor layers(41) and a protrusion(70). The substrate has the first refractive index. A plurality of III nitride semiconductor layers is formed on the substrate. A part of protrusion is made of the substrate. The other part of protrusion is made of a material having the second refractive index. The protrusion scatters the light generated in the active layer(40) of a plurality of III nitride semiconductor layers. The step height is formed in the protrusion.