| 发明名称 |
INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE |
| 摘要 |
A method of fabricating an integrated circuit includes depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric. The first dielectric material is etched to form sidewall spacers on sidewalls of the gate stack. A top surface of the first dielectric material is chemically converted to a second dielectric material by adding at least one element to provide surface converted sidewall spacers. The second dielectric material is chemically bonded across a transition region to the first dielectric material. |
| 申请公布号 |
US2016233132(A9) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201213427062 |
申请日期 |
2012.03.22 |
| 申请人 |
KIRKPATRICK BRIAN K.;JAIN AMITABH |
发明人 |
KIRKPATRICK BRIAN K.;JAIN AMITABH |
| 分类号 |
H01L29/772;H01L29/423;H01L29/66;H01L29/78;H01L27/092;H01L21/3105;H01L21/3065;H01L21/02;H01L29/161;H01L21/336;H01L21/311 |
主分类号 |
H01L29/772 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an integrated circuit, comprising:
depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric; etching said first dielectric material to form sidewall spacers comprising said first dielectric material on sidewalls of said gate stack, and chemically converting a top surface of said first dielectric material to a second dielectric material by adding at least one element thereto to provide surface converted sidewall spacers, wherein said second dielectric material is chemically bonded across a transition region to said first dielectric material. |
| 地址 |
ALLEN TX US |
