| 发明名称 | Substrate processing apparatus and a method of manufacturing a semiconductor device | ||
| 摘要 | The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit. | ||
| 申请公布号 | US9472424(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201514958517 | 申请日期 | 2015.12.03 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC. | 发明人 | Hamano Katsuyoshi;Tsubota Yasutoshi;Tomita Masayuki;Yoshino Teruo |
| 分类号 | C23C16/00;H01L21/324;C23C16/46;C23C16/52;H01J37/32;H01L21/02;H01L21/67;H01L21/687;H01L21/306 | 主分类号 | C23C16/00 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A method of processing a substrate comprising steps of: loading a substrate into a process chamber, supporting the substrate loaded into the process chamber above a predetermined distance apart from a suceptor by a substrate support unit, elevating the temperature of the substrate supported the predetermined distance apart from the suceptor by the substrate support unit, by a heating unit established in the suceptor during a predetermined time in the state of providing pressure in the process chamber that is higher than the pressure in the step of loading the substrate before transferring the substrate to the suceptor, transferring the substrate supported on the substrate support unit to the suceptor and supporting the substrate on a top surface of the suceptor after the step of elevating the temperature passed the predetermined time, processing a surface of the substrate, transferred to the suceptor and supported on the top surface of the suceptor, by gas while heating by the heating unit in the state of supplying the gas into the process chamber and providing the pressure in the process chamber a predetermined pressure, and unloading the substrate processed in the step of processing of the substrate from an inside of the process chamber. | ||
| 地址 | Tokyo JP | ||