| 摘要 |
A metal-oxide-semiconductor field-effect transistors (MOSFET) having localized stressors is provided. In accordance with embodiments of the present invention, a transistor comprises a high-stress film over the source/drain regions, but not over the gate electrode. The high-stress film may be a tensile-stress film for use with n-channel devices or a compressive-stress film for use with p-channel devices. A method of fabricating a MOSFET with localized stressors over the source/drain regions comprises forming a transistor having a gate electrode and source/drain regions, forming a high-stress film over the gate electrode and the source/drain regions, and thereafter removing the high-stress film located over the gate electrode, thereby leaving the high-stress film located over the source/drain regions. A contact-etch stop layer may be formed over the transistor.
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