METHOD OF PRODUCING N-TYPE GROUP-13 NITRIDE SEMICONDUCTOR, METHOD OF FORMING CURRENT CONFINEMENT LAYER, METHOD OF PRODUCING SURFACE EMITTING LASER, METHOD OF CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR AND METHOD OF PRODUCING SEMICONDUCTOR LASER

摘要

The object of the present invention is to provide a method of producing an n-type group-13 nitride semiconductor which enables resistance of the n-type group-13 nitride semiconductor to be changed, as well as, a method of producing a laser using the above method to produce a current confinement structure. There is provided a method of producing an n-type group-13 nitride semiconductor, including: preparing an n-type group-13 nitride semiconductor; and irradiating the n-type group-13 nitride semiconductor with light having a wavelength of 350 nm or more to 370 nm or less so as not to change a crystal structure of the n-type group-13 nitride semiconductor before and after the light irradiation, thereby increasing resistance of the n-type group-13 nitride semiconductor.