Methods for fabricating self-aligning semiconductor hetereostructures using nanowires

摘要

Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.

主权项

1. An electronic arrangement comprising:
a semiconductor substrate; a cleaved semiconductor nanowire on the semiconductor substrate, wherein the cleaved semiconductor nanowire comprises at least one of a silicon-on-insulator or a bulk silicon structure, an oxide layer partially coating the cleaved semiconductor nanowire and coating the semiconductor substrate, wherein the oxide layer and the cleaved semiconductor nanowire define an uncoated region of the cleaved semiconductor nanowire, and an epitaxial material having a different lattice structure or composition from the cleaved semiconductor nanowire on and bounded horizontally in the direction of the substrate surface by the uncoated region of the cleaved semiconductor nanowire, wherein the epitaxial material is a quantum dot.