发明名称 |
Iteratively selective gas flow control and dynamic database to achieve CD uniformity |
摘要 |
A method for compensating for CD variations across a semiconductor process wafer surface in a plasma etching process including providing a semiconductor wafer having a process surface including photolithographically developed features imaged from a photomask; determining a first dimensional variation of the features with respect to corresponding photomask dimensions along at least one wafer surface direction to determine a first levelness of the process surface; determining gas flow parameters in a plasma reactor for a plasma etching process required to approach a level process surface by reference to an archive of previous plasma etching process parameters carried out in the plasma reactor; carrying out the plasma etching process in the plasma rector according to the determined gas flow parameters; and, determining a second dimensional variation of the features along the at least one wafer surface direction to determine a second levelness of the process surface.
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申请公布号 |
US2004185584(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20030394334 |
申请日期 |
2003.03.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN LI-TE S.;WANG YUI;CHANG MING-CHING;CHEN LI-SHUNG;LIN HUAIN-JELIN;CHIU YUAN-HUNG;TAO HUN-JAN |
分类号 |
H01L21/00;H01L21/66;(IPC1-7):H01L21/00;H01L21/311 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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