| 摘要 |
PROBLEM TO BE SOLVED: To form source and drain regions by executing ionization by plasma discharge easily forming a large area, selecting an element forming a shallow impurity level in an oxide semiconductor thin-film layer, forming ions over a large area without performing mass separation for a gas made of this element by plasma decomposition or the like and introducing the ionized element into the oxide semiconductor thin-film layer. SOLUTION: In the thin-film transistor, a gate insulating film and a gate electrode are self-alignedly formed into the same shape, and the oxide semiconductor thin-film layer is source-drain regions including a region where the concentration of at least one kind of elements of hydrogen (H), helium (He), neon (Ne), argon (Ar), krypton (Kr), fluorine (F), xenon (Xe) and oxygen (O) is higher in a range other than the lower side of the gate electrode than in a range of the lower side of the gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
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