Semiconductor devices with a thermally conductive layer and methods of their fabrication

摘要

An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate and an upper surface, an active area, a substrate opening in the semiconductor substrate that is partially defined by a recessed surface, and a thermally conductive layer disposed over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate within the active area. A method for fabricating the semiconductor device includes defining an active area, forming a gate electrode over a channel in the active area, forming a source electrode and a drain electrode in the active area on opposite sides of the gate electrode, etching a substrate opening in the semiconductor substrate that is partially defined by the recessed surface, and depositing a thermally conductive layer over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate over the channel.

主权项

1. A semiconductor device comprising:
a semiconductor substrate that includes a host substrate, an upper surface, and a channel; an active area proximate the upper surface of the semiconductor substrate; a substrate opening in the semiconductor substrate wherein a bottom of the substrate opening is defined by a recessed surface of the semiconductor substrate; and a thermally conductive layer disposed over the semiconductor substrate and over the channel that contacts the recessed surface of the semiconductor substrate and extends between the recessed surface of the semiconductor substrate and a portion of the semiconductor substrate within the active area, the thermally conductive layer comprising a substantially electrically insulating layer within the active area.