发明名称 Nonvolatile semiconductor memory device and programming method therefor
摘要 A method for reducing programming time of a nonvolatile semiconductor device is provided. In the method, after a plurality of memory cells are programmed by n-bit units, the memory cells are checked to determine whether the programming is completed. If any memory cell fails the programming operation, the reprogramming of the memory cells are performed. For the reprogramming, the n is multiplied by 2, wherein n is an integer not less than 2. Otherwise, if all the memory cells complete the programming or the number of the program operation gets to the maximum value, the memory cells finish the program operation. Accordingly, the method can reduce time for programming of the memory cells.
申请公布号 US2002167842(A1) 申请公布日期 2002.11.14
申请号 US20010008886 申请日期 2001.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM MYONG-JAE
分类号 G11C16/12;(IPC1-7):G11C16/04 主分类号 G11C16/12
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