METHOD FOR MANUFACTURING THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY USING ALUMINUM OXIDATION LAYER AS BUFFER LAYER

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) for a LCD(Liquid Crystal Display) using an aluminum oxidation layer as a buffer layer is provided to prevent a thin film from being isolated, by forming a thin aluminum(Al2O3) layer on both sides of a metal thin film. CONSTITUTION: A first aluminum layer is formed on a glass substrate(1). The aluminum layer is oxidized. A gate metal(Ag-Pd-Cu)(4) is formed on the oxidized aluminum layer. The gate metal(4) is etched. A second aluminum layer is formed on the patterned gate metal. The aluminum layer is oxidized. A gate insulating layer, a semiconductor layer and a semiconductor layer injected with high density impurities are formed on the oxidized aluminum layer.