Phase change memory, writing method thereof and reading method thereof

摘要

A phase change memory (PCM), a writing method thereof and a reading method thereof are provided. The PCM has a plurality of memory cells. The writing method comprises the following steps. At least one stress pulse is applied for aging at least one of the memory cells. A starting pulse is applied to all of the memory cells of the PCM for decreasing a resistance of each memory cell. A detection pulse is applied to all of the memory cells of the PCM for detecting the resistance of each memory cell. A set pulse is applied to the aged memory cells. A reset pulse is applied to the non-aged memory cells.

主权项

1. A writing method of a phase change memory (PCM), wherein the PCM has a plurality of memory cells, and the writing method comprises:
applying at least one stress pulse for aging at least one of the memory cells; applying a starting pulse to all of the memory cells of the PCM for decreasing a resistance of each memory cell; applying a detection pulse to all of the memory cells of the PCM for detecting the aged memory cells and the non-aged memory cells; applying a set pulse to the aged memory cells; and applying a reset pulse to the non-aged memory cells; wherein the starting pulse is different from the set pulse.