| 发明名称 |
NON-VOLATILE MEMORY DEVICE |
| 摘要 |
A non-volatile memory device according to example embodiments includes at least one NAND flash memory and a memory controller configured to control the NAND flash memory. The memory controller comprises a bit counter configured to count a number of first binary digit of each of first to N-th readout page data, the first to N-th readout page data being respectively read by first to N-th test read voltages, a register configured to store first to N-th count values with respect to the first to N-th readout page data output from the bit counter, and a read voltage adjuster configured to compare the first to N-th count values to determine a read voltage, where N is an integer greater than 1. |
| 申请公布号 |
US2016300609(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201415029217 |
申请日期 |
2014.10.06 |
| 申请人 |
THE-AIO CO., LTD. |
发明人 |
Han Seung-Hyun;Hwang Sun-Mo |
| 分类号 |
G11C11/56;G06F11/10 |
主分类号 |
G11C11/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device, comprising:
at least one NAND flash memory; and a memory controller configured to control the NAND flash memory, wherein the memory controller comprises:
a bit counter configured to count a number of first binary digit of each of first to N-th readout page data, the first to N-th readout page data being respectively read by first to N-th test read voltages;a register configured to store first to N-th count values with respect to the first to N-th readout page data output from the bit counter; anda read voltage adjuster configured to compare the first to N-th count values to determine a read voltage, and wherein N is an integer greater than 1. |
| 地址 |
Seongnam-si, Gyeonggi-do KR |
