| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of suppressing mutual interference of plasma even when the plasma is generated on both sides of a substrate to have a film deposited.SOLUTION: The plasma CVD apparatus includes: first and second anodes and first and second cathodes disposed inside a chamber; a holding part for holding a substrate; an AC power source connected to the first and second cathodes; a gas supply mechanism; an exhaust mechanism; and a control part which executes control so as to apply a second voltage to one of the first and second anodes while applying a first voltage to the other one of the first and second anodes by a DC power source at a first timing, and apply the first voltage to one of the first and second anodes while applying the second voltage to the other one of the first and second anodes by the DC power source at a second timing. The second voltage is greater than 0 V, and the first voltage is greater than the second voltage. |
