Method of manufacturing array substrate, array substrate and display device

摘要

A method of manufacturing an array substrate, an array substrate and a display device are provided. The method of manufacturing the array substrate includes: forming a pattern of a gate metal layer including a gate line and a gate electrode and preserving photoresist at a position on the pattern of the gate metal layer corresponding to a gate lead hole; sequentially forming a gate insulating thin film, a semiconductor thin film and a source/drain metal thin film; removing the photoresist preserved at the position on the pattern of the gate metal layer corresponding to the gate lead hole, and forming the gate lead hole; forming a pattern of a source/drain metal layer including a source electrode, a drain electrode and a data line and a semiconductor layer; and forming a pattern including a pixel electrode layer and a channel.

主权项

1. A method of manufacturing an array substrate, comprising:
forming a pattern of a gate metal layer comprising a gate line and a gate electrode and preserving photoresist at a position on the pattern of the gate metal layer corresponding to a gate lead hole; sequentially forming a gate insulating thin film, a semiconductor thin film and a source/drain metal thin film; removing the photoresist preserved at the position on the pattern of the gate metal layer corresponding to the gate lead hole, and forming the gate lead hole; forming a pattern of a semiconductor layer and a source/drain metal layer comprising a source electrode, a drain electrode and a data line; and forming a pattern comprising a pixel electrode layer and a channel, wherein, forming the pattern comprising the pixel electrode layer and the channel comprises: forming a transparent conductive thin film; applying photoresist on the transparent conductive thin film, forming a third structure of photoresist corresponding to the pattern of the pixel electrode layer and the channel, the third structure of photoresist comprising the photoresist preserved at a position on the transparent conductive thin film corresponding to the gate lead hole and the photoresist preserved at a position on the transparent conductive thin film corresponding to a source/drain lead terminal; and forming the pattern of the pixel electrode layer and the channel, and preserving the third structure of photoresist after forming the pixel electrode layer and the channel, wherein, after forming the pattern comprising the pixel electrode layer and the channel, the method further comprises: forming an insulating protective thin film; and removing the photoresist preserved on the patter of the pixel electrode layer, and stripping the insulating protective thin film formed on the photoresist at the same time, to form an insulating protective structure above the channel.