Method of making a semiconductor device package with dummy gate

摘要

A semiconductor device package includes a first substrate, which has a lower substrate surface and an upper substrate surface. A conductive dummy gate structure is disposed over the upper substrate surface. An interconnect structure is disposed over the conductive dummy gate structure. The interconnect structure includes a plurality of metal layers disposed within a dielectric structure and at least one of the metal layers is electrically coupled to the conductive dummy gate structure. A conductive through-substrate via extends from the lower substrate surface to an underside of the conductive dummy gate structure and is electrically coupled to the conductive dummy gate structure.

主权项

1. A semiconductor device package, comprising:
a first substrate including a lower substrate surface and an upper substrate surface; a conductive dummy gate structure disposed over the upper substrate surface; an interconnect structure disposed over the conductive dummy gate structure, wherein the interconnect structure includes a plurality of metal layers disposed within a dielectric structure and wherein at least one of the metal layers is electrically coupled to the conductive dummy gate structure; and a conductive through-substrate via extending from the lower substrate surface to an underside of the conductive dummy gate structure and being electrically coupled to the conductive dummy gate structure, wherein the conductive dummy gate structure covers an entire uppermost surface of the conductive through-substrate via.