| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor element having an organic semiconductor transistor which can be fabricated with high efficiency while exhibiting excellent transistor characteristics. SOLUTION: In the organic semiconductor element having an organic semiconductor transistor comprising a substrate, a gate electrode formed on the substrate, a gate insulating layer formed to cover the gate electrode, an organic semiconductor layer formed of an organic semiconductor material on the gate insulating layer in contact therewith, and a source electrode and a drain electrode formed in contact with the organic semiconductor layer, the gate insulating layer has an insulating photocatalyst layer containing binder resin and photocatalyst exhibiting insulation, and a silicon compound layer formed of an organic silane compound on the insulating photocatalyst layer. COPYRIGHT: (C)2008,JPO&INPIT
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