发明名称 |
ATOMIC LAYER DEPOSITION OF GERMANIUM OR GERMANIUM OXIDE |
摘要 |
A process of depositing germanium on a substrate includes sequentially exposing in at least one deposition cycle the substrate inside a chamber with a Ge-containing precursor and a reducing or oxidizing precursor. |
申请公布号 |
SG11201605374U(A) |
申请公布日期 |
2016.09.29 |
申请号 |
SG11201605374U |
申请日期 |
2014.03.04 |
申请人 |
PICOSUN OY |
发明人 |
LI, WEI-MIN |
分类号 |
C23C16/455;C23C16/22;C23C16/40;H01L21/02;H01L21/314 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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