发明名称 |
Method of formation of buried mirror semiconductive device |
摘要 |
A method for forming a buried optical mirror in an integrated circuit (IC) begins by forming an opening (18) within a substrate (12). The opening (18) is then filled with a plurality of dielectric layers (20-26) that have different indexes of refraction whereby a Bragg reflector can be formed. A chemical mechanical polishing (CMP) process is then used to planarize the layers (20-26) such that these layers (20-26) only reside within the opening (18) whereby a mirror is formed. Lateral selective epitaxial growth, polysilicon deposition and recrystallization, or wafer bonding is then used to form a single crystalline or near single crystalline semiconductive material (32b) over a top of the substrate (12) and the reflecting mirror. Photodevice(s) are then formed over the mirror in the region (28) of material (32b) whereby reflecting mirror (20-26) will improve the quantum efficiency and speed of the photodevice(s).
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申请公布号 |
US6150190(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19990320866 |
申请日期 |
1999.05.27 |
申请人 |
MOTOROLA INC. |
发明人 |
STANKUS, JOHN J.;FOWLER, BURT WAYNE |
分类号 |
H01L31/0232;H01L31/18;H01L33/10;(IPC1-7):H01L21/00 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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