METHOD FOR PRODUCING HIGH SILICON STEEL STRIP IN A CONTINUOUSLY TREATING LINE

摘要

The present invention relates to a method for producing high silicon steel strip in a continuously treating line through a chemical vapor deposition, wherein the steel strip is treated continuously with siliconization at temperatures between 1023 and 1200.degree.C by chemical vapor deposition in a non-oxidizing gas atmosphere containing SiCl4 between 5 and 35% in molar fraction, and subsequently performed with a diffusion treatment in a non-oxidizing gas atmosphere not containing SiCl4 for diffusing Si uniformly within the steel strip, and coiled after cooling. If a steel strip coated with an insulating film is required, the insulating film can be applied after the diffusion treatment - cooling, and coiled after a baking treatment.