| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element which reduces the pn junction capacity not resulting from light reception, and is advantageous to reduce the element size. <P>SOLUTION: The semiconductor light receiving element 1 includes an n-type semiconductor substrate 101, a mesa-like light receiving region 110 formed on the n-type semiconductor substrate 101, a light receiving surface 119 provided on the upper surface of the light receiving region 110, and a p-type electrode 112 formed on the light receiving region 110. The light receiving region 110 includes a p-type contact layer. The p-type contact layer is formed directly under the light receiving surface 119. The p-type electrode 112 is arranged in the light receiving surface 119. <P>COPYRIGHT: (C)2010,JPO&INPIT |
