Optical proximity correction for improved electrical characteristics

摘要

A method, computer program product, and data processing system for performing an improved optical proximity correction are disclosed, which better respect the electrical properties of the device being manufactured. A preferred embodiment of the present invention performs OPC by first dividing the perimeter of a mask region into a plurality of segments, then grouping the segments into at least two distinct groups, wherein segments in the first of these groups are adjusted in position so as to minimize edge placement error (EPE) when the photolithography using the mask is simulated. Segments in the second group are adjusted in position so as to minimize cumulative error in a dimension spanning the region, wherein the span of such dimension extends from segments in the first group to segments in the second group. Correction so obtained by this process more readily preserves the intended electrical behavior of the original device design.

主权项

1. A computer-implemented method of correcting a design of a photomask to account for diffraction, the method comprising:
dividing, in an application executing using a processor and a memory, a perimeter of a region within the photomask into a plurality of segments; grouping the plurality of segments into a first group and a second group; adjusting positions of segments from the first group such that an edge placement error is minimized; and adjusting positions of segments from the second group such that an error in a physical dimension spanning at least a portion of the region is minimized.