| 摘要 |
PROBLEM TO BE SOLVED: To prevent the formation of a portion of unstable film quality in an initial stage of thin film formation. SOLUTION: When a thin film for a semiconductor device is formed on a substrate by introducing a reaction gas, a first reaction assistance gas of low reaction efficiency and a second reaction assistance gas of high reaction efficiency, the reaction gas is supplied outside a chamber and the first reaction assistance gas of low reaction efficiency is supplied inside the chamber, and then the supply of the reaction gas is changed to the inside of the chamber. After the first reaction assistance gas and the reaction gas are supplied into the chamber for a prescribed time, the supply of the first reaction assistance gas is stopped, a second reaction assistance gas of high reaction efficiency is supplied into the chamber at a flow rate in a range of 0.5 to 1.5 times the flow rate of the first reaction assistance gas, and a thin film is formed on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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