| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and a method of manufacturing the semiconductor memory which reduces a write/erase operating voltage for stack type memory cells to obtain a highly integrated memory cell structure and the reduction of power consumption. SOLUTION: The memory has a plurality of memory cell transistors each comprising a gate insulation film 2 electrically conducting owing to a tunnel effect, a floating gate electrode 21 on the gate insulation film 2, an inter-electrode insulation film 11 formed on the floating gate electrode 21 having a positive charge layer at the layer side of the lower half of a film thickness, and a control gate electrode 24 on the insulation film 11. COPYRIGHT: (C)2005,JPO&NCIPI
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