| 摘要 |
PROBLEM TO BE SOLVED: To provide a model formula of circuit simulation which can be applied even if a channel length is further shortened. SOLUTION: The method of calculating the model formula of circuit simulation comprises steps of calculating first parasitic resistance which is not dependent on a gate voltage from actual measurement data of a semiconductor element; calculating second parasitic resistance which is dependent on a gate voltage from I-V characteristics from which the first parasitic resistance has been removed; and separating the second parasitic resistance from channel resistance and third parasitic resistance formed on both sides below a gate length by using various kinds of diffusion resistors TEG with the same width W but with a different length L. An I-V characteristic formula is obtained by using the third parasitic resistance as an independent characteristic. COPYRIGHT: (C)2005,JPO&NCIPI
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