| 摘要 |
A semiconductor storage device (1) is equipped with a thin film capacitor (30) that is provided at a position facing a circuit surface (11) of a memory chip (10), said position excluding a center pad region (14). The thin film capacitor (30) includes a first surface electrode (31), a thin film dielectric layer (33) formed of a paraelectric material or a ferroelectric material, and a second surface electrode (32). The first surface electrode includes: a first power supply input section (31Gin), to which a power supply voltage to the memory chip, said power supply voltage having one polarity, is supplied; and a first power supply output section (31Gout) that is provided in the vicinity of the center pad region for the purpose of outputting the power supply voltage to the center pad (13), said power supply voltage having the one polarity. The second surface electrode includes: a second power supply input section (32Vin), which is formed on the thin film dielectric layer, and to which a power supply voltage to the memory chip, said power supply voltage having the other polarity, is supplied; and a second power supply output section (32Vout) provided in the vicinity of the center pad region for the purpose of applying the power supply voltage to the center pad, said power supply voltage having the other polarity. |
