METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode. Then, a cap insulating film including silicon and nitrogen is formed over the photodiode before implanting impurity ions for formation of an n-type low-concentration semiconductor region of the transfer transistor, into the other part of the p-type well positioned on a side opposite to the one side with respect to the gate electrode.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
(a) providing a semiconductor substrate; (b) forming a first semiconductor region of a first conduction type on a side of a main surface of the semiconductor substrate; (c) forming a first gate electrode over the first semiconductor region via a first gate insulating film; (d) forming a second semiconductor region of a second conduction type opposite to the first conduction type, in a first part of the first semiconductor region positioned on a first side with respect to the first gate electrode; (e) after the step (d), forming a first insulating film over the first part; and (f) forming a third semiconductor region of the second conduction type, in a second part of the first semiconductor region positioned on a side opposite to the first side with respect to the first gate electrode, with the first insulating film formed over the first part, wherein a photodiode is formed by the first semiconductor region and the second semiconductor region, wherein a transfer transistor for transferring electric charges generated by the photodiode is formed by the first gate electrode and the third semiconductor region, and wherein the first insulating film includes silicon and nitrogen.