发明名称 |
Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication |
摘要 |
A strained silicon p-type MOSFET utilizes a strained silicon channel region formed on a silicon germanium substrate. Silicon germanium regions are formed to the silicon germanium layer adjacent to ends of the strained silicon channel region, and shallow source and drain extensions are implanted in the silicon germanium material. The shallow source and drain extensions do not extend into the strained silicon channel region. By forming the source and drain extensions in silicon germanium material rather than in silicon, source and drain extension distortions caused by the enhanced diffusion rate of boron in silicon are avoided.
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申请公布号 |
US6703648(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020282559 |
申请日期 |
2002.10.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;PATON ERIC N.;WANG HAIHONG |
分类号 |
H01L21/336;H01L21/337;H01L29/10;H01L29/80;(IPC1-7):H01L29/04;H01L31/036;H01L31/033;H01L31/032 |
主分类号 |
H01L21/336 |
代理机构 |
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