| 主权项 |
1. A semiconductor device having a bonding pad, comprising:
a first metal film formed on a first interlayer insulating film; a second interlayer insulating film formed on the first metal film; a plurality of first metal plugs and a plurality of second metal plugs formed so as to pierce the second interlayer insulating film; and a bonding pad formed on the second interlayer insulating film so as to make electrical connection with the first metal film via the first and second metal plugs, the bonding pad being formed of a second metal film, wherein the first metal plugs have a diameter larger than the diameter of the second metal plugs, and wherein the second metal film extends into holes in the first metal plugs so that a surface area of the bonding pad directly above each of the first metal plugs has a recessed portion formed therein. |
