| 发明名称 | Photo-masks for lithography | ||
| 摘要 | A photo-mask for use in extreme ultraviolet (EUV) lithography, in which the photo-mask has low coefficient of thermal expansion and high specific stiffness. | ||
| 申请公布号 | US9411222(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514676460 | 申请日期 | 2015.04.01 |
| 申请人 | Zygo Corporation | 发明人 | Tricard Marc |
| 分类号 | G03F1/22;G03F1/48;G03F1/46;G03F1/76;H05G2/00;G21K1/06 | 主分类号 | G03F1/22 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A photo-mask for use in extreme ultraviolet (EUV) lithography, the photo-mask comprising: a cordierite ceramic substrate layer; a reflector layer on a front surface of the substrate layer; a capping layer on the reflector layer; an absorber layer on the capping layer; an anti-reflection coating on the absorber layer; and a backside coating on a back surface of the substrate layer, wherein the back surface is opposite the front surface. | ||
| 地址 | Middlefield CT US | ||