| 发明名称 |
SELECTIVELY DEGRADING CURRENT RESISTANCE OF FIELD EFFECT TRANSISTOR DEVICES |
| 摘要 |
A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET. |
| 申请公布号 |
US2016293603(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201615177768 |
申请日期 |
2016.06.09 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Leobandung Effendi;Wendel Dieter;Yamashita Tenko |
| 分类号 |
H01L27/092;H01L21/8234;H01L29/167;H01L27/11;H01L29/161;H01L21/8238;H01L27/088 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first finFET having a first channel charge type; a second finFET having the first channel charge type, the second finFET having a material formed on a fin of the second finFET to increase a current resistance of the second finFET relative to the first finFET; and one or more third finFETs having a second channel charge type opposite the first channel charge type, the one or more third finFETs being electrically connected to the second finFET, such that a current flow through the one or more third finFETs is a multiple greater than one of a current flow through the second finFET. |
| 地址 |
Armonk NY US |
