| 摘要 |
The present invention discloses a magnetron sputtering reactor (410) and a method of use thereof, wherein, SIP sputtering and ICP sputtering are promoted, and further discloses an auxiliary magnet array positioned towards a jamb wall (414) at the side of wafers from a target along the magnetron sputtering reactor.For the magnetron (436), a small magnetron which is provided with a weaker inner magnetic pole (440) encompassing a second magnetic pole and a stronger outer magnetic pole (442) of a first magnetic pole is preferably adopted, with all the magnetic poles in yoke (444) rotates around aventricular shaft (438) by adopting a rotary mechanism (446, 448, 450).For the auxiliary magnet (462), a magnet provided with the first magnetic polarity to drag an unbalanced magnetic field (460) towards the wafers (424) is preferably adopted, with the wafers arranged on a base plate (422) to which a power (454) is supplied. A getting-through valve (428) is used for supplying argon (426), and a power (436) is supplied to the target (416). |
