发明名称 |
Process for the selective metallization of partial structures or regions comprises applying a conducting adhesive or producing a conducting path on a substrate, and selectively depositing metal on the conducting adhesive |
摘要 |
Process for the selective metallization of partial structures or regions comprises: applying a conducting adhesive or producing a conducting path on a substrate; and selectively depositing metal on the conducting adhesive. An Independent claim is also included for a device for the selective metallization of partial structures or regions comprising a dispensing arrangement having a metallizing device (3) for the integrated deposition of the metal. Preferred Features: The metallizing device has a pin (4) for producing a conducting path, a capillary arrangement (5) for applying and removing electrolyte materials and an electrode arrangement (6) for galvanically depositing metal.
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申请公布号 |
DE10206434(A1) |
申请公布日期 |
2002.11.14 |
申请号 |
DE2002106434 |
申请日期 |
2002.02.15 |
申请人 |
ISA CONDUCTIVE MICROSYSTEMS GMBH |
发明人 |
MEINEN, TOMAS |
分类号 |
H01L21/48;H01L21/60;H05K1/02;H05K1/09;H05K1/16;H05K3/00;H05K3/10;H05K3/12;H05K3/24;H05K3/28;H05K3/32;H05K3/40;H05K3/46;(IPC1-7):H05K1/11;H01L21/768 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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