发明名称 Process for the selective metallization of partial structures or regions comprises applying a conducting adhesive or producing a conducting path on a substrate, and selectively depositing metal on the conducting adhesive
摘要 Process for the selective metallization of partial structures or regions comprises: applying a conducting adhesive or producing a conducting path on a substrate; and selectively depositing metal on the conducting adhesive. An Independent claim is also included for a device for the selective metallization of partial structures or regions comprising a dispensing arrangement having a metallizing device (3) for the integrated deposition of the metal. Preferred Features: The metallizing device has a pin (4) for producing a conducting path, a capillary arrangement (5) for applying and removing electrolyte materials and an electrode arrangement (6) for galvanically depositing metal.
申请公布号 DE10206434(A1) 申请公布日期 2002.11.14
申请号 DE2002106434 申请日期 2002.02.15
申请人 ISA CONDUCTIVE MICROSYSTEMS GMBH 发明人 MEINEN, TOMAS
分类号 H01L21/48;H01L21/60;H05K1/02;H05K1/09;H05K1/16;H05K3/00;H05K3/10;H05K3/12;H05K3/24;H05K3/28;H05K3/32;H05K3/40;H05K3/46;(IPC1-7):H05K1/11;H01L21/768 主分类号 H01L21/48
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