MICRO ELECTRO MECHANICAL SYSTEM (MEMS) BASED WIDE-BAND POLYMER PHOTO-DETECTOR

摘要

A polymer based photo-detector has photoresponsivity in Ultraviolet, Visible, Near and Mid Infrared regions. The photo-detector comprises a single layer of polyvinyl alcohol (PVA) as a photoactive layer; with no additional buffer layer for accepting Ultraviolet, Visible and Infrared radiation as well as no buffer layer to block charge carrier injection. The PVA layer's photoresponsivity is extended from Ultraviolet to Near Infrared by changing its nano-morphology on a low thermal device structure. The primarily photo-generated charge carriers diffuse through the amorphous part of the polymer layer and split into charge carriers on the electrodes or by the charge traps in the layer. The charge carrier generation is in the picosecond range; thus the exciton and Polaron drift diffusion cause electrical conduction of the polymer layer under Ultraviolet illumination. The low thermal mass of the MEMS based structure reduces localized heating effect due to Infrared radiation, increasing responsivity of the photo-detector.

主权项

1. A polymer based miniaturized wideband photo-detector comprising:
one of a p-type or n-type substrate of Silicon (Si); an insulating layer of Silicon dioxide (SiO2) deposited over the substrate; at least one metal electrode deposited over the insulating layer; and a single photoactive layer of an organic polymer deposited between said at least one metal electrode; wherein the photo-detector comprises a micro electro mechanical system (MEMS) bridge diaphragm structure closed from a top surface and comprises a groove in a bottom surface of said substrate.