发明名称 HEATING PHASE CHANGE MATERIAL
摘要 A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.
申请公布号 US2016211017(A1) 申请公布日期 2016.07.21
申请号 US201615084103 申请日期 2016.03.29
申请人 MICRON TECHNOLOGY, INC. 发明人 Wicker Guy C.;Pellizzer Fabio;Varesi Enrico;Pirovano Agostino
分类号 G11C13/00;H01L27/24;H01L45/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A system comprising: a controller; a wireless interface coupled to said controller; and a phase change memory, coupled to said controller, said phase change memory including first and second chalcogenide materials, said first and second chalcogenide materials being spaced from one another by an intervening layer, an opening through said intervening layer to reduce the space in between said first and second chalcogenide materials.
地址 Boise ID US